philips semiconductors product specification silicon diffused power transistor bu2527AF general description new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. features improved rbsoa performance and is suitable for operation up to 64 khz. quick reference data symbol parameter conditions typ. max. unit v cesm collector-emitter voltage peak value v be = 0 v - 1500 v v ceo collector-emitter voltage (open base) - 800 v i c collector current (dc) - 12 a i cm collector current peak value - 30 a p tot total power dissipation t hs 25 ?c - 45 w v cesat collector-emitter saturation voltage i c = 6.0 a; i b = 1.2 a - 5.0 v i csat collector saturation current 6.0 - a t s storage time i csat = 6.0 a; i b(end) = 0.55 a 1.7 2.0 m s pinning - sot199 pin configuration symbol pin description 1 base 2 collector 3 emitter case isolated limiting values limiting values in accordance with the absolute maximum rating system (iec 134) symbol parameter conditions min. max. unit v cesm collector-emitter voltage peak value v be = 0 v - 1500 v v ceo collector-emitter voltage (open base) - 800 v i c collector current (dc) - 12 a i cm collector current peak value - 30 a i b base current (dc) - 8 a i bm base current peak value - 12 a -i b(av) reverse base current average over any 20 ms period - 200 ma -i bm reverse base current peak value 1 -7a p tot total power dissipation t hs 25 ?c - 45 w t stg storage temperature -65 150 ?c t j junction temperature - 150 ?c thermal resistances symbol parameter conditions typ. max. unit r th j-hs junction to heatsink without heatsink compound - 3.7 k/w r th j-hs junction to heatsink with heatsink compound - 2.8 k/w r th j-a junction to ambient in free air 35 - k/w 12 3 case b c e 1 turn-off current. september 1997 1 rev 1.200
philips semiconductors product specification silicon diffused power transistor bu2527AF isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol repetitive peak voltage from all r.h. 65 % ; clean and dustfree - 2500 v three terminals to external heatsink c isol capacitance from t2 to external f = 1 mhz - 22 - pf heatsink static characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit i ces collector cut-off current 2 v be = 0 v; v ce = v cesmmax - - 0.25 ma i ces v be = 0 v; v ce = v cesmmax ; - - 2.0 ma t j = 125 ?c i ebo emitter cut-off current v eb = 7.5 v; i c = 0 a - - 0.25 ma bv ebo emitter-base breakdown voltage i b = 1 ma 7.5 13.5 - v v ceosust collector-emitter sustaining voltage i b = 0 a; i c = 100 ma; 800 - - v l = 25 mh v cesat collector-emitter saturation voltage i c = 6.0 a; i b = 1.2 a - - 5.0 v v besat base-emitter saturation voltage i c = 6.0 a; i b = 1.2 a - - 1.3 v h fe dc current gain i c = 1 a; v ce = 5 v - 10 - h fe i c = 6 a; v ce = 5 v 5 7 9 dynamic characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions typ. max. unit c c collector capacitance i e = 0 a; v cb = 10 v; f = 1 mhz 145 - pf switching times (64 khz line i csat = 6.0 a; l c = 170 m h; deflection circuit) c fb = 5.4 nf; i b(end) = 0.55 a; l b = 0.6 m h; -v bb = 2 v; (-di b /dt = 3.33 a/ m s) t s turn-off storage time 1.7 2.0 m s t f turn-off fall time 0.1 0.2 m s 2 measured with half sine-wave voltage (curve tracer). september 1997 2 rev 1.200
philips semiconductors product specification silicon diffused power transistor bu2527AF fig.1. test circuit for v ceosust . fig.2. oscilloscope display for v ceosust . fig.3. switching times waveforms. fig.4. switching times definitions. fig.5. switching times test circuit . fig.6. test circuit rbsoa. v cc = 140 v; -v bb = 4 v; l c = 100 - 200 m h; v cl 1500 v; l b = 3 m h; c fb = 1 - 2.2 nf; i b (end) = 1 - 2 a + 50v 100-200r horizontal vertical oscilloscope 1r 6v 30-60 hz 100r icsat 90 % 10 % tf ts ibend ic ib t t - ibm vce / v min vceosust ic / ma 100 200 250 0 + 150 v nominal adjust for icsat lc cfb t.u.t. lb ibend -vbb v icsat i end 16 us 6.5 us 5 us t t t transistor diode b i c i b ce lb ibend -vbb lc t.u.t. vcc vcl cfb september 1997 3 rev 1.200
philips semiconductors product specification silicon diffused power transistor bu2527AF fig.7. typical dc current gain. h fe = f (i c ) v ce = 5 v fig.8. typical base-emitter saturation voltage. v be sat = f (i c ); parameter i c /i b fig.9. typical collector-emitter saturation voltage. v ce sat = f (i c ); parameter i c /i b fig.10. typical base-emitter saturation voltage. v be sat = f (i b ); parameter i c fig.11. typical turn-off losses. t j = 85?c poff = f (i b ); parameter i c ; f = 64 khz fig.12. typical collector storage and fall time. ts = f (i b ); tf = f (i b ); parameter i c ; t j = 85?c; f = 64 khz 0.01 0.1 1 10 100 ic / a 100 10 1 bu2527a h fe tj = 25 c tj = -40 c tj = 85 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ib / a 1.2 1.1 1 0.9 0.8 0.7 0.6 bu2527a vbesat / v tj = 25 c tj = 85 c ic = 7a 6a 5a 0.1 1 10 ic / a 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 vbesat / v bu2527a tj = 25 c tj = 85 c ic/ib = 3 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ib / a 100 10 1 poff / w bu2527AF ic = 6a 5a 0.1 10 ic / a 10 1 0.1 0.01 1 100 vcesat / v bu2527a tj = 25 c tj = 85 c ic/ib = 5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ib / a 4 3.5 3 2.5 2 1.5 1 0.5 0 ts, tf / us bu2527AF ic = 6a 5a september 1997 4 rev 1.200
philips semiconductors product specification silicon diffused power transistor bu2527AF fig.13. normalised power dissipation. pd% = 100 p d /p d 25?c = f (t hs ) fig.14. transient thermal impedance. z th j-hs = f(t); parameter d = t p /t fig.15. forward bias safe operating area. t hs = 25 ?c i cdc & i cm = f(v ce ); i cm single pulse; parameter t p second-breakdown limits independant of temperature. mounted with heatsink compound. fig.16. reverse bias safe operating area. t j t jmax 0 20 40 60 80 100 120 140 ths / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound bu2525af ic / a 100 10 1 0.1 0.01 1 10 100 1000 vce / v 100 us 1 ms 10 ms dc 40 us tp = ptot icm icdc = 0.01 1e-06 1e-04 1e-02 1e+00 t / s zth / (k/w) bu2525af 10 1 0.1 0.01 0.001 d = t p t p t t p t d d = 0 0.02 0.05 0.1 0.2 0.5 0 30 20 10 0 500 1000 1500 vce / v ic / a bu2527AF september 1997 5 rev 1.200
philips semiconductors product specification silicon diffused power transistor bu2527AF mechanical data dimensions in mm net mass: 5.5 g fig.17. sot199; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 6.2 5.8 3.5 21.5 max 15.7 min 12 3 2.1 max 1.2 1.0 0.4 2.0 0.7 max 45 o 3.2 5.2 max 3.1 3.3 7.3 15.3 max 0.7 5.45 seating plane 5.45 3.5 max not tinned m september 1997 6 rev 1.200
philips semiconductors product specification silicon diffused power transistor bu2527AF definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. september 1997 7 rev 1.200
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